发明名称 DEPOSITION OF FILMS USING ORGANOSILSESQUIOXANE-PRECURSORS
摘要 <p>There is provided an array of alkyl substituted silsesquioxane thin film precursors having a structure wherein alkyl groups are bonded to the silicon atoms of a silsesquioxane cage. The alkyl groups may be the same as, or different than the other alkyl groups. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [R-SiO1.5]x[H-SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. R is a C1 to C100 alkyl group. Also provided are films made from these precursors and objects comprising these films.</p>
申请公布号 EP1222196(B1) 申请公布日期 2004.01.14
申请号 EP20000973601 申请日期 2000.10.17
申请人 HONEYWELL INTELLECTUAL PROPERTIES INC. 发明人 HACKER, NIGEL, P.
分类号 C07F7/08;C07F7/21;C08G77/12;C23C14/10;C23C16/40;C23C16/42;H01L21/312;(IPC1-7):C07F7/21 主分类号 C07F7/08
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