| 摘要 |
<p>A polycrystalline silicon thin film used in a thin film transistor (TFT) and a device fabricated by using the same, in which the uniformity of the TFT and device are improved by providing a polycrystalline silicon thin film of a TFT characterized in that probabilities P1 and P2 in which the maximum number of respective primary crystal grain boundaries for transistors TR1 and TR2 that are arranged perpendicularly to each other can be contained in active channel regions represented as in the following expressions, respectively, and the probability P1 or P2 is not 0.5, and a device using the polycrystalline silicon thin film for the TFT. <DF>Expression 1 P1=(D1-(Nmax1-1)XGs1)/Gs1; </DF> <DF>Expression 2 P2=(D2-(Nmax2-1)XGs2)/Gs2; </DF> where D1=L1cos&thetas; +W1sin&thetas; , D2= L2cos&thetas; +W2sin&thetas; , L1 and L2 are lengths of active channels of the transistors TR1 and TR2, W1 and W2 are widths of active channels of the transistors TR1 and TR2, Nmax1 and Nmax2 are the maximum numbers of the "primary" crystal grain boundaries that can be contained in the active channel regions for each of the transistors TR1 and TR2, Gs1 and Gs2 are crystal grain sizes having a fatal effect on characteristics of each of the transistors TR1 and TR2, and &thetas; is an angle in which the "primary" crystal grain boundaries are inclined at a direction perpendicular to an active channel direction of the respective transistors TR1 and TR2. <IMAGE></p> |
