发明名称 Semiconductor integrated circuit device
摘要 A semiconductor integrated circuit device which has a low power consumption in a static state. A first NMOS transistor includes a gate connected to an input, a source connected to ground, and a drain connected to an output. A second NMOS transistor includes a gate connected to the power supply, and a drain and source, one connected to the input terminal and the other to the first NMOS transistor's body. A first PMOS transistor includes a gate connected to the input, a source connected to a power supply, and a drain connected to the output. A second PMOS transistor includes a gate connected to ground, and a drain and source, one connected to the input terminal and the other to the first PMOS transistor's body. Also, the second NMOS transistor's body is connected to ground, or the second PMOS transistor's body is connected to VDD, or both.
申请公布号 US6677803(B1) 申请公布日期 2004.01.13
申请号 US20020224420 申请日期 2002.08.21
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 CHIBA TADASHI
分类号 G06G7/24;(IPC1-7):G06G7/24 主分类号 G06G7/24
代理机构 代理人
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