| 摘要 |
Various methods of determining ion implant dosage are disclosed. In one aspect, a method of processing a semiconductor workpiece that has a device region and an inactive region is provided. A first mask is formed on a first portion of the inactive region. A first implant of ions is performed on the device region and the first mask. A secondary ion mass spectrometry analysis of the first portion of the first mask is performed to determine a composition thereof relative to a standard composition. A dose for the first implant is determined based upon the secondary ion mass spectrometry analysis of the first portion of the first mask. The first implant dose is compared with a prescribed dose for the first implant to determine if a second implant is necessary to achieve the prescribed dose, and if so, an appropriate make-up dose for the second implant.
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