| 摘要 |
(S12) A reference forward scattering intensity epsilonp is determined as equal to such a slice level that by adjusting the width of a pattern having the minimum width included in a block pattern repeatedly used and collectively exposed, the slice level that is in the range of 30 to 70% of the peak value of a forward scattering intensity distribution of the pattern becomes equal to the design width of the pattern. (S15) in each pattern in the block pattern a pattern width is adjusted such that the width of a forward scattering intensity distribution at epsilonp becomes equal to the design width of the pattern. Further, a collected exposure dose Qcp is determined such that Qcp(epsilonp+alphap'eta)=Eth holds, where Eth is a threshold value for pattern developing, q is a backscattering coefficient and alphap' is an effective pattern area density. In an electron projection method, Eth is determined in epsilonp+alphap'eta=Eth, then alphap' is determined, and a pattern width is determined from a function epsilonp of a design width and a pattern width.
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