| 摘要 |
An address signal, a device control signal and a test pattern data outputted from a pattern generating part are applied to a semiconductor device under test, a response output signal from the semiconductor device under test is compared by a logical comparison part with an expected value data outputted from the pattern generating part, and the logical comparison part generates upon detection of a discordance in the comparison result a failure data representing a failure memory cell, which data is stored together with the address signal, the device control signal and the expected value data outputted from the pattern generating part in a data failure memory, wherein a variable delay part that can give arbitrary time delays to the address signal, the expected value data, and the device control signal, respectively is provided on a data transmission path connecting the pattern generating part to the data failure memory.
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