Endpoint detection in the etching of dielectric layers

摘要

In a method of manufacturing a miniature multilayer device 10 a low open area dielectric layer 18 is selectively etched through to an underlying conductive region 16 using an electrically conducting medium such as a plasma 24. The endpoint of the etch process is determined by detecting the abrupt change in capacitance across the device 10 just as the final portion of the dielectric layer is removed.