| 摘要 |
PURPOSE: A method for forming a copper line of a semiconductor device is provided to prevent the variation of dielectric constant of an interlayer dielectric by omitting etch processing of the interlayer dielectric. CONSTITUTION: After forming the first photoresist pattern(12) on a substrate(11), the first silicon oxide layer(13) is formed on the first photoresist pattern by first ashing. After forming the second photoresist pattern(14) on the resultant structure, the second silicon oxide layer(15) is formed on the second photoresist pattern by second ashing. A copper layer is formed on upper part of an entire structure and a polishing process is performed. After removing the second and first photoresist pattern, and the second and first silicon nitride layer, an interlayer dielectric(17) is formed on the resultant structure.
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