| 摘要 |
PURPOSE: A transistor of a semiconductor device and a method for manufacturing the same are provided to improve resistance to hot carrier effect and to restrain attacks of boron into a channel region by using a gate oxide with double structure of an oxynitride layer and a silicon nitride layer. CONSTITUTION: A plurality of gate electrodes(207a,207b) are formed on a semiconductor substrate(201). A source and drain(213a,213b) are formed in the substrate. A gate oxide layer(245) is formed between the gate electrodes and the substrate. At this time, the gate oxide layer(245) has a double structure consisting of an oxynitride layer(205) and a silicon nitride layer(204).
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