发明名称 PHOTOLITHOGRAPHY METHODS AND SYSTEMS
摘要 Lithographic methods are disclosed. In one such method, a pulsed ultraviolet radiation source for producing ultraviolet lithography radiation having a wavelength shorter than about 300 nm at a fluence of less than 10 mJ/cm<SUP>2</SUP>/pulse and a high purity fused silica lithography glass having a concentration of molecular hydrogen of between about 0.02x10<SUP>18 </SUP>molecules/cm<SUP>3 </SUP>and about 0.18x10<SUP>18 </SUP>molecules/cm<SUP>3 </SUP>are provided. A lithography pattern is formed with the ultraviolet lithography radiation; the lithography pattern is reduced to produce a reduced lithography pattern; and the reduced lithography pattern is projected onto a ultraviolet radiation sensitive lithography medium to form a printed lithography pattern. At least one of the forming, reducing, and projecting steps includes transmitting the ultraviolet lithography radiation through the high purity fused silica lithography glass. Lithography systems and high purity fused silica lithography glass are also described.
申请公布号 KR20040004389(A) 申请公布日期 2004.01.13
申请号 KR20037004713 申请日期 2003.04.02
申请人 发明人
分类号 G03F7/00;C03B19/14;C03C3/06;C03C4/00;C03C23/00;G02B1/00;G03F7/20;H01L21/027 主分类号 G03F7/00
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