| 摘要 |
PURPOSE: An image sensor is provided to be capable of reducing dangling bonds by selecting appositely the orientation of a silicon substrate. CONSTITUTION: A silicon substrate(10) of the first conductive type cuts by (100) plane. A field insulating layer(11) is locally formed at the silicon substrate. A gate electrode(13) is formed on the silicon substrate spaced apart from the field insulating layer. A photodiode(PD) is formed on the silicon substrate between one side of the gate electrode and the field insulating layer. A sensing diffused node(FD) of the second conductive type is formed between the other side of the gate electrode and the field insulating layer.
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