Solid state image sensor and method for manufacturing the same

摘要

A solid state image sensor that prevents a reduction of transfer efficiency even if pixel size is reduced. A first semiconductor region is formed on a semiconductor substrate and a second semiconductor region is formed on the first semiconductor region. A plurality of parallel isolation regions are arranged in the second semiconductor region at predetermined intervals. Depth of the isolation regions is less than the thickness of the second semiconductor region such that the potential of transfer regions in the second semiconductor region is affected by a potential barrier formed in first semiconductor region rather than a potential barrier formed around the isolation regions when the intervals between the isolation regions are relatively narrow.