| 摘要 |
PURPOSE: A method for forming a fine pattern of a semiconductor device is provided to prevent collapse or bending of photoresist patterns by using a mask capable of controlling transmittance. CONSTITUTION: An etch object layer and a photoresist layer are sequentially formed on a semiconductor substrate. A photoresist pattern is formed by exposing and developing the photoresist layer using a mask including a phase shifter so as to control transmittance. A fine pattern is then formed by etching the etch object layer using the photoresist pattern.
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