| 摘要 |
PURPOSE: A method is provided to be capable of analyzing and correcting pattern deformation in modified illuminating system by using a predetermined type pattern. CONSTITUTION: A plurality of curve type patterns(32) and rectangular type patterns(30) are formed at the center portion and each corner of a mask, respectively. A patterning process is carried out at the upper portion of a wafer by using the mask for forming a predetermined pattern. Then, the predetermined pattern formed at the upper portion of the wafer, is compared to a normal pattern for analyzing whether the deformation of the predetermined pattern formed at the upper portion of the wafer, is generated, or not. The inner sigma and the outer sigma of modified illuminating system, are controlled by using the analyzed result.
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