| 摘要 |
PURPOSE: To reduce the threshold voltage of a planar capacitor at the same time by controlling the thresholds of respective MOS transistors without increasing the number of processes in a semiconductor integrated circuitdevice having the planar capacitor and using a plurality of power source voltages. CONSTITUTION: The semiconductor integrated circuit device comprises a p-channel memory transistor and the capacitor formed on an first n-type element region, an n-channel low voltage MOS transistor formed on a second p-typeelement region, and an n-channel high voltage MOS transistor formed on a third p-type element region. Channel doping is performed with a high concentration profile by a p-type impurity element on the channel region of a second MOS transistor, and at the same time, the p-type impurity element is substantially introduced with the same profile on the first element region.
|
