SEMICONDUCTOR MEMORY DEVICE HAVING OFFSET COMPENSATION SENSING METHOD

摘要

PURPOSE: A semiconductor memory device having an offset compensation sensing method is provided which enables a flip-flop sense amplifier to perform a stable sensing operation without regard to an offset voltage of its own. CONSTITUTION: The first and the second bit lines are arranged on the first area, and are connected to a plurality of memory cells respectively. An offset compensation amplification circuit detects one voltage variation of the first and the second bit lines, and drives another bit line according to the detection result. A sense amplifier circuit is arranged on the second area, and senses and amplifies a voltage difference between the first and the second bit lines. The offset compensation amplification circuit compensates an offset voltage as to a reference voltage in response to the first control signal before detecting the voltage variation of one bit line.