| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to be capable of preventing deformation of a contact hole caused by the difference of doping concentration between stacked interlayer dielectrics. CONSTITUTION: A doped first interlayer dielectric(22) is formed on a semiconductor substrate(20) having an active region(21). The second interlayer dielectric(23) with a relatively low doping concentration compared to the first interlayer dielectric is formed on the resultant structure. A contact hole is formed to expose the active region by two-step etching processes, wherein O2 plasma treatment is used as the second etching in order to improve processing margins. The contact hole is then wet-cleaned.
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