| 摘要 |
PURPOSE: A method for manufacturing a phase shift mask is provided to simplify processes and to reduce manufacturing costs by forming a spacer at the sidewall of a light shielding pattern. CONSTITUTION: A light shielding layer and a photoresist layer are sequentially formed on a transparent substrate(100). A photoresist pattern is formed to expose a desired region of the light shielding layer. A light shielding pattern(140) is formed by etching the light shielding layer using the photoresist pattern as a mask. A spacer(150) is formed at both sidewalls of the light shielding pattern(140). Nitride or oxide is used as the spacer.
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