发明名称 Method for forming a hydrophilic surface on low-k dielectric insulating layers for improved adhesion
摘要 A method for forming a dielectric insulating layer with increased hydrophilicity for improving adhesion of an adjacently deposited material layer in semiconductor device manufacturing including providing a semiconductor wafer having a process surface for forming a dielectric insulting layer thereover; depositing the dielectric insulating layer; and, subjecting the dielectric insulating layer including an exposed surface to a hydrophilicity increasing treatment including at least one of a dry plasma treatment and a wet process including contacting the exposed surface with a hydrophilicity increasing solution including a surfactant said wet process followed by a baking process to improve an adhesion of an adjacently deposited material layer.
申请公布号 US6677251(B1) 申请公布日期 2004.01.13
申请号 US20020207339 申请日期 2002.07.29
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD 发明人 LU HSIN-HSIEN;SONG AARON;BAO TIEN-I;JANG SYUN-MING
分类号 H01L21/768;(IPC1-7):H01L21/31;H01L21/469;H01L21/26 主分类号 H01L21/768
代理机构 代理人
主权项
地址