发明名称 |
Method for forming a hydrophilic surface on low-k dielectric insulating layers for improved adhesion |
摘要 |
A method for forming a dielectric insulating layer with increased hydrophilicity for improving adhesion of an adjacently deposited material layer in semiconductor device manufacturing including providing a semiconductor wafer having a process surface for forming a dielectric insulting layer thereover; depositing the dielectric insulating layer; and, subjecting the dielectric insulating layer including an exposed surface to a hydrophilicity increasing treatment including at least one of a dry plasma treatment and a wet process including contacting the exposed surface with a hydrophilicity increasing solution including a surfactant said wet process followed by a baking process to improve an adhesion of an adjacently deposited material layer.
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申请公布号 |
US6677251(B1) |
申请公布日期 |
2004.01.13 |
申请号 |
US20020207339 |
申请日期 |
2002.07.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
LU HSIN-HSIEN;SONG AARON;BAO TIEN-I;JANG SYUN-MING |
分类号 |
H01L21/768;(IPC1-7):H01L21/31;H01L21/469;H01L21/26 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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