Bipolar transistor

摘要

The invention provides a bipolar transistor attaining large MSG and a method of fabricating the same. The bipolar transistor of this invention includes a collector layer; abase layer deposited on the collector layer; and a semiconductor layer deposited on the base layer in the shape of a ring along the outer circumference of the base layer, the semiconductor layer includes a ring-shaped emitter region functioning as an emitter, and the outer edge of the emitter region and the outer edge of the base layer are disposed in substantially the same plane position.