SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to be capable of effectively preventing the generation of junction short between a source and drain in a bulk area, for obtaining good electrical characteristics of an MOS(Metal Oxide Semiconductor) transistor. CONSTITUTION: A semiconductor device is provided with a semiconductor substrate(100), isolation layers(110) formed at the upper portion of the semiconductor substrate for defining a device formation region, an epitaxial silicon layer(130) formed between the isolation layers at the upper portion of the semiconductor substrate, and a blocking insulating layer(125) formed at the inner portion of the epitaxial silicon layer for dividing the device formation region into a plurality of portions. The semiconductor device further includes a gate(150) formed at the upper portion of the blocking insulating layer, and a source and drain junction(105) formed at both sides of the gate at the inner portion of the epitaxial silicon layer.