| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an element separating oxide film having a satisfactory upper plane structure and to provide its manufacturing method. SOLUTION: When representing the thickness of a gate electrode layer 6 by t<SB>G</SB>, the height t<SB>U</SB>from the top of the gate insulation film 5 to the top portion of the maximum film thickness portion of the element separating oxide film 4 and the angleθi on the acute angle side formed by the top of the element separating oxide film 4 and the top of the gate insulation film are set at the following range:äθi, t<SB>U</SB>¾0≤θi≤56.6°, 0≤t<SB>U</SB>≤0.82t<SB>G</SB>}. COPYRIGHT: (C)2004,JPO
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