SEMICONDUCTOR DEVICE AND ITS FABRICATING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device exhibiting excellent high speed operational characteristics by depositing a metal film for forming silicide and then doping the source/drain. SOLUTION: The semiconductor device comprises a semiconductor film formed on an insulated surface and having a pair of first impurity regions, a pair of second impurity regions formed between the pair of first impurity regions, and a channel forming region formed between the pair of second impurity regions; a gate insulating film formed on the semiconductor film; and a gate electrode formed on the gate insulating film. The first impurity region has a concentration higher than that of the second impurity region, the channel forming region and a part of the pair of second impurity regions are formed beneath the gate electrode through the gate insulating film. Silicide is formed on the surface of the pair of first impurity regions and connected with the metal wiring. COPYRIGHT: (C)2004,JPO