| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated gate semiconductor device made of silicon carbide that can improve the breakdown voltage at turning off enough to solve a problem especially caused by the adoption of silicon carbide as a semiconductor material, has low continuity resistance, high switching speed, etc. and can make a unit compact. SOLUTION: A p<SP>+</SP>-type buried layer 9 is formed on the bottom of a p-type base layer 8, and a p<SP>+</SP>-type well area 7 is formed inside the base layer 8, reducing the resistance of a passage where a charging current flows at turning off and blocking the continuity of a parasitic transistor. Furthermore, two layers of drain layers 3 and 4 are adopted to make the buried layer 9 deeper. COPYRIGHT: (C)2004,JPO
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