| 摘要 |
PROBLEM TO BE SOLVED: To enhance stability in the operational performance of a display and to enlarge the design margin in circuit design. SOLUTION: The semiconductor element comprises a semiconductor, a gate insulation film touching the semiconductor, a gate electrode facing an active layer through the gate insulation film, a first inorganic insulating film provided above the active layer, an SOG film provided on the first inorganic insulating film, a second inorganic insulating film provided on the SOG film and an interconnection provided on the second inorganic insulating film. The inner wall face of a first opening made in the SOG film is covered with the second inorganic insulating film, a second opening is made in the multilayer structure including the gate insulation film, the first inorganic insulating film and the second inorganic insulating film on the inside of the first opening, and the semiconductor is connected with the interconnection through the first and second openings. COPYRIGHT: (C)2004,JPO
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