| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit having high integrity by forming a plurality of semiconductor elements requiring integrity with an aligned crystallinity semiconductor film having an arranged crystallinity thereby providing a semiconductor circuit in which variation is suppressed between semiconductor elements. SOLUTION: In a part or entire thin film transistors constituting an analog circuit, e.g. a current mirror circuit, a differential amplifier circuit or an operational amplifier circuit, where high integrity is required for semiconductor elements, the channel forming region has an aligned crystallinity semiconductor film. High integrity can be expected for an analog circuit having an aligned crystallinity semiconductor film as the channel forming region of a thin film transistor. More specifically, the channel forming regions at least of the thin film transistors having the same polarity, among the thin film transistors constituting the analog circuit, are aligned. COPYRIGHT: (C)2004,JPO
|
