发明名称 |
Method of reworking tungsten particle contaminated semiconductor wafers |
摘要 |
A method for reworking a metal particulate contaminated semiconductor wafer process surface following a metal dry etchback process including providing a semiconductor wafer including a dielectric insulating layer having anisotropically etched openings lined with a first barrier/adhesion layer formed according to a blanket deposition process and an overlying metal layer formed according to a blanket deposition process filling the anisotropically etched openings; dry etching in an etchback process to remove the metal layer to form a process surface revealing at least a portion of the first barrier/adhesion layer; performing a chemical mechanical polishing (CMP) process to rework the process surface to remove a remaining portion of the metal layer including the first barrier/adhesion layer to endpoint detection of the dielectric insulating layer; and, blanket depositing a second barrier/adhesion layer over the dielectric insulating layer.
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申请公布号 |
US2004005783(A1) |
申请公布日期 |
2004.01.08 |
申请号 |
US20020188750 |
申请日期 |
2002.07.02 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LEE CHOU-FENG |
分类号 |
H01L21/02;H01L21/302;H01L21/321;H01L21/4763;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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