| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize an active matrix panel in which the pitch between the unit cells of a driving circuit side can be made small by optimizing the arrangement of thin film transistors for a shift register. <P>SOLUTION: In the source line driving circuit 40 of the active matrix panel, a TFT (Thin Film Transistor) constituting the clocked inverters 3a, 4a of the unit shift register A1 is formed on thin film transistors-forming regions 300a-300d. In the thin film transistors-forming regions, the one end sides of the different conductive thin film transistors-formed thin film transistors-forming regions are in proximity, respectively, and the other end sides of them are located in the opposite direction, respectively. Thus, the thin film transistors are unevenly distributed for every conductivity, and the forming pitch P2 of the unit shift register is narrowed. <P>COPYRIGHT: (C)2004,JPO |
