| 摘要 |
PROBLEM TO BE SOLVED: To suppress reduction of a resist height or deformation of a resist shape when a plurality of repeated patterns are etched on an insulation film by using a resist film having an opening reduced by heat treatment. SOLUTION: First, a film to be etched is formed on a semiconductor substrate, and a resist film 31 is formed on the film. Next, an opening 32 is formed on the first resist film 31 through a first opening formation step. Then the first resist film 31 is removed from the film, and a second resist film is formed thereon. An opening 33 is formed on the second resist film through a second opening formation step. COPYRIGHT: (C)2004,JPO
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