| 摘要 |
PROBLEM TO BE SOLVED: To provide a preparation process for growing a silicon single crystal through Czochralski method with a high productivity and yield without any trouble in operation, even when growing a large-diameter crystal required for realizing cost reduction of a device step, particularly a large-diameter crystal of≥300 mm (12 inch), at a high rate within a V-rich region. SOLUTION: In the preparation process for growing the silicon single crystal having a crystal grain size of D mm through Czochralski method, a radiation-blocking member is placed around the crystal to cool the crystal by blocking the radiation. The distance between the lower end of the radiation-blocking member and the surface of a silicon melt is adjusted to≥D/ 8 mm. COPYRIGHT: (C)2004,JPO
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