发明名称 |
Combination of SRAM and MROM cells |
摘要 |
A new memory cell combination is disclosed. It includes a static random access memory (SRAM) unit and a mask read only memory (MROM) unit. The prior art separates the two memory units in different areas on a chip so that the circuit layout is not optimized. The disclosed cell combines them in the same area, saving more than 20% of the area.
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申请公布号 |
US2004004882(A1) |
申请公布日期 |
2004.01.08 |
申请号 |
US20030608527 |
申请日期 |
2003.06.30 |
申请人 |
LIAW SHION-HAU;CHEN LI-YEH |
发明人 |
LIAW SHION-HAU;CHEN LI-YEH |
分类号 |
G11C11/00;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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