发明名称 TFT SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a TFT substrate that can reduce the number of photographing steps and improve productivity. <P>SOLUTION: The TFT substrate is provided with a gate electrode comprising a first metallic film 22 formed on a substrate 20 and a second metallic film 24 formed thereon, a gate pad comprising the second metallic film 24 formed on the substrate 20, an insulation film 26 that is formed on the substrate in a manner to partly expose the second metallic film 24 of the gate pad, semiconductor film patterns 28 and 30 formed on the insulation film 26 on the gate electrode, a source electrode 32a and a drain electrode 32b formed respectively on the semiconductor film patterns 28 and 30, a protection film pattern 34 that is formed as to have a contact hole exposing the drain electrode 32b and the second metallic film 24 of the gate pad respectively, and a first pixel electrode pattern 36 contact with the drain electrode 24 and a second pixel electrode pattern 36a contact with the second metallic film 24 of the gate pad on the protection film pattern 34. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004006936(A) 申请公布日期 2004.01.08
申请号 JP20030199728 申请日期 2003.07.22
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 LEE JUENG-GIL;LEE JUNG-HO;NAM HYO-RAK
分类号 G02F1/1343;G02F1/1345;G02F1/136;G02F1/1362;G02F1/1368;H01L21/28;H01L21/3205;H01L21/336;H01L21/768;H01L23/482;H01L23/52;H01L27/12;H01L29/423;H01L29/49;H01L29/786;(IPC1-7):H01L21/336;H01L21/320 主分类号 G02F1/1343
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