发明名称 MILLIWAVE BAND MODULE WITH BUILT-IN SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To provide a milliwave band module with a built-in semiconductor in which the heat from a semiconductor device operating in a milliwave band is efficiently dissipated so that the semiconductor devices and circuit components are mounted in high density. SOLUTION: The module comprises an electric insulating substrate (105) composed of a mixture containing an inorganic filler and thermo-setting resin; a high heat-conductive substrate (103) of a dielectric material of high heat conductivity which is laminated on one surface of the electric insulating substrate (105); a plurality of wiring patterns (119) formed on both substrates, a semiconductor device (101) which is disposed inside the electric insulating substrate (105), mounted in face-up to the high heat-conductive substrate (103), and electrically connected to the wiring pattern (119) for operation in a milliwave band; and a distribution constant circuit element (121) and active element (124) provided on it. A void (107) is provided in the interior of the electric insulating substrate (105), and in the exterior of the surface of the distribution constant circuit element (121) and the active element (124). COPYRIGHT: (C)2004,JPO
申请公布号 JP2004006757(A) 申请公布日期 2004.01.08
申请号 JP20030086254 申请日期 2003.03.26
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 IWAKI HIDEKI;TAGUCHI YUTAKA;OGURA TETSUYOSHI;SUGAYA YASUHIRO;ASAHI TOSHIYUKI;NISHIYAMA TOSAKU;IDOKAWA YOSHINOBU
分类号 H01L23/12;H01P5/19;(IPC1-7):H01L23/12 主分类号 H01L23/12
代理机构 代理人
主权项
地址