发明名称 REFLECTIVE INTERFACE BETWEEN LIGHT EMITTING DIODE LAYER AND BONDED WAFER
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a light emitting diode for manufacturing a light emitting diode having a desired mechanical property and translucency and of minimizing the resistivity at the interface between the transparent layer and the growth layer. <P>SOLUTION: A light emitting diode is manufactured in such a way that after a light emitting diode structure 40 of a relatively thin film is formed by growing light emitting diode layers 32, 34, 36 and 38 sequentially one another on a temporary growth substrate, the temporary growth substrate is removed and instead a conductive, translucent substrate 42 is bonded by means of the wafer-bonding technique to the light emitting diode layer 32 in the position of the temporary growth substrate. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004006986(A) 申请公布日期 2004.01.08
申请号 JP20030294341 申请日期 2003.08.18
申请人 LUMILEDS LIGHTING US LLC 发明人 KISH FRED A;STERANKA FRANK M;DEFEVERE DENNIS C;ROBBINS VIRGINIA M;UEBBING JOHN
分类号 H01L21/02;H01L21/20;H01L21/60;H01L25/075;H01L33/00;H01L33/14;H01L33/30 主分类号 H01L21/02
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