| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device comprising a terminating circuit which attains reduced power consumption. SOLUTION: A first MOSFET of a first conduction type and a second MOSFET of a second conduction type are provided, and their source-drain paths are connected between the termination of a signal transmission path and ground potential, and between the termination of the signal transmission path and supply voltage respectively. A bias voltage supplied to the gate of the first MOSFET is held by a first capacitor, and a bias voltage supplied to the gate of the second MOSFET is held by a second capacitor. COPYRIGHT: (C)2004,JPO
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