| 摘要 |
PROBLEM TO BE SOLVED: To provide a charge coupled device providing excellent performance regardless of having a structure of a single layer gate electrode. SOLUTION: This charge coupled device, having a single layer gate electrode structure, comprises a gate insulator film 10 formed on a silicon substrate 1; a plurality of barriers 20, consisting of an insulator, formed on the gate insulator film 10; and recess gate electrodes 30, arranged between adjacent ones of the barriers 20, having side faces formed along side portions of the barriers 20. COPYRIGHT: (C)2004,JPO
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