发明名称 |
ETCHANT AND ETCHING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To form a laminated film having a second layer comprising aluminum or an aluminum alloy which contains at least one element selected from N, O, Si and C formed on a first layer comprising aluminum or an aluminum alloy through a single etching process wherein both films composing the laminated film are simultaneously formed with high precision, thus forming a fine wiring pattern while preventing the undercut of the upper layer film. SOLUTION: An etchant has a phosphoric acid content of 35-65 wt.% and a nitric acid content of 0.5-15 wt.%. and is used in the etching process. COPYRIGHT: (C)2004,JPO
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申请公布号 |
JP2004003005(A) |
申请公布日期 |
2004.01.08 |
申请号 |
JP20030114581 |
申请日期 |
2003.04.18 |
申请人 |
MITSUBISHI CHEMICALS CORP;ADVANCED DISPLAY INC |
发明人 |
SAITO NORIYUKI;YOSHIDA TAKUJI;INOUE KAZUNORI;ISHIKAWA MAKOTO;KAMIHARAGUCHI YOSHIO |
分类号 |
G02F1/13;C23F1/20;G02F1/1343;H01L21/306;H01L21/3213;(IPC1-7):C23F1/20;G02F1/134;H01L21/321 |
主分类号 |
G02F1/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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