发明名称 ETCHANT AND ETCHING METHOD
摘要 PROBLEM TO BE SOLVED: To form a laminated film having a second layer comprising aluminum or an aluminum alloy which contains at least one element selected from N, O, Si and C formed on a first layer comprising aluminum or an aluminum alloy through a single etching process wherein both films composing the laminated film are simultaneously formed with high precision, thus forming a fine wiring pattern while preventing the undercut of the upper layer film. SOLUTION: An etchant has a phosphoric acid content of 35-65 wt.% and a nitric acid content of 0.5-15 wt.%. and is used in the etching process. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004003005(A) 申请公布日期 2004.01.08
申请号 JP20030114581 申请日期 2003.04.18
申请人 MITSUBISHI CHEMICALS CORP;ADVANCED DISPLAY INC 发明人 SAITO NORIYUKI;YOSHIDA TAKUJI;INOUE KAZUNORI;ISHIKAWA MAKOTO;KAMIHARAGUCHI YOSHIO
分类号 G02F1/13;C23F1/20;G02F1/1343;H01L21/306;H01L21/3213;(IPC1-7):C23F1/20;G02F1/134;H01L21/321 主分类号 G02F1/13
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