发明名称 |
Fabrication method for shallow trench isolation |
摘要 |
A method for fabricating a shallow trench isolation structure includes forming a hard mask layer over a substrate. An ion bombardment step is further performed on the surface of the hard mask layer, followed by forming a patterned photoresist layer on the surface of the hard mask layer. Thereafter, the hard mask layer is patterned using the photoresist layer as an etching mask. An etching process is further performed to form a trench in the substrate. The photoresist layer is then removed, followed by filling an insulation layer in the trench. After this, the hard mask is removed to complete the fabrication of a shallow trench isolation region.
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申请公布号 |
US2004005765(A1) |
申请公布日期 |
2004.01.08 |
申请号 |
US20020064370 |
申请日期 |
2002.07.08 |
申请人 |
MA SZU-TSUN;CHANG KENT KUOHUA |
发明人 |
MA SZU-TSUN;CHANG KENT KUOHUA |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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