发明名称 |
Device and method for the depostion of, in particular, crystalline layers on, in particular, crystalline substrates |
摘要 |
The invention relates to a device and method for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber, by means of reaction gases which are fed to the process chamber where they react pyrolytically. The process chamber has a first wall and a second wall, lying opposite the first. The first wall is provided with at least one heated substrate holder, to which at least one reaction gas is led by means of a gas inlet device. According to the invention, a premature decomposition of source gases and a local oversaturation of the gas flow with decomposition products may be avoided, whereby the gas inlet device is liquid cooled.
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申请公布号 |
US2004005731(A1) |
申请公布日期 |
2004.01.08 |
申请号 |
US20030378495 |
申请日期 |
2003.03.03 |
申请人 |
JURGENSEN HOLGER;STRAUCH GERHARD KARL;KAPPELER JOHANNES |
发明人 |
JURGENSEN HOLGER;STRAUCH GERHARD KARL;KAPPELER JOHANNES |
分类号 |
C23C16/44;C23C16/455;C30B25/14;C30B29/36;H01L21/205;(IPC1-7):H01L21/44 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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