发明名称 |
Flash memory devices having self aligned shallow trench isolation structures and methods of fabricating the same |
摘要 |
Flash memory devices are provided including an integrated circuit substrate and a stack gate structure on the integrated circuit substrate. A trench isolation region is provided on the integrated circuit substrate adjacent the stack gate structure. A portion of the stack gate structure adjacent a trench sidewall of the trench isolation region may include a first nitrogen doped layer.
|
申请公布号 |
US2004004265(A1) |
申请公布日期 |
2004.01.08 |
申请号 |
US20030455679 |
申请日期 |
2003.06.05 |
申请人 |
LEE CHANG-HYUN;PARK DONG-GUN |
发明人 |
LEE CHANG-HYUN;PARK DONG-GUN |
分类号 |
H01L21/76;H01L21/28;H01L21/336;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|