| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a superior semiconductor device. SOLUTION: Using a laser processing system comprising a carrying-in/out chamber for carrying in/out a substrate, a carring chamber including a robot arm, a heating chamber for heating the substrate, and a laser irradiating chamber for irradiating the substrate with a laser beam while heating the substrate, the crystalline semiconductor film is illadiated with the laser beam while moving the laser beam so as to epitaxial grow the crystalline semiconductor film. COPYRIGHT: (C)2004,JPO
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