发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD, HIGH-SPEED ROTARY VALVE, AND CLEANING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an ALD deposition device capable of improving purge efficiency and being operated by high throughput. SOLUTION: A substrate processing apparatus is provided with a substrate holding base for holding a substrate to be processed, a processing container to be exhausted at an exhaust port, and a raw material gas supply system for alternately supplying first and second raw material gases to the processing container in the form of laminar. The exhaust port is formed in a slit shape extended in a direction roughly orthogonal to the direction that the laminar flows, a valve provided with a valve body having a slit-like opening corresponding to the slit shape of the exhaust port is engaged with the exhaust port, and the slit-like opening of the valve body is formed so as to be displaced in the direction orthogonal to the extending direction of the exhaust port. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004006733(A) 申请公布日期 2004.01.08
申请号 JP20030079501 申请日期 2003.03.24
申请人 TOKYO ELECTRON LTD 发明人 JINRIKI HIROSHI;ARAMI JIYUNICHI
分类号 H01L21/31;B08B7/00;C23C16/44;C23C16/455;F16K5/04;F16K51/02;H01L21/316;(IPC1-7):H01L21/31 主分类号 H01L21/31
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