发明名称 |
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD, HIGH-SPEED ROTARY VALVE, AND CLEANING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide an ALD deposition device capable of improving purge efficiency and being operated by high throughput. SOLUTION: A substrate processing apparatus is provided with a substrate holding base for holding a substrate to be processed, a processing container to be exhausted at an exhaust port, and a raw material gas supply system for alternately supplying first and second raw material gases to the processing container in the form of laminar. The exhaust port is formed in a slit shape extended in a direction roughly orthogonal to the direction that the laminar flows, a valve provided with a valve body having a slit-like opening corresponding to the slit shape of the exhaust port is engaged with the exhaust port, and the slit-like opening of the valve body is formed so as to be displaced in the direction orthogonal to the extending direction of the exhaust port. COPYRIGHT: (C)2004,JPO
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申请公布号 |
JP2004006733(A) |
申请公布日期 |
2004.01.08 |
申请号 |
JP20030079501 |
申请日期 |
2003.03.24 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
JINRIKI HIROSHI;ARAMI JIYUNICHI |
分类号 |
H01L21/31;B08B7/00;C23C16/44;C23C16/455;F16K5/04;F16K51/02;H01L21/316;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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