METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for preventing degraded reliability when employing an anti-reflection coating for forming two stages of openings in an interlayer dielectric film. SOLUTION: The method for manufacturing the semiconductor device includes the steps of: forming an anti-reflection coating 20 made of an inorganic material on the interlayer dielectric film 10; forming a via-hole 11 in the interlayer dielectric film 10 by etching the interlayer dielectric film 10 through a mask of a resist pattern 21p on the anti-reflection coating 20; removing the resist pattern 21p while leaving the anti-reflection coating 20 and thereafter forming a resist pattern 30p on a prescribed region of the anti-reflection coating 20; and forming a wiring groove 12 having a larger opening area than that of the via-hole 11 at least on an upper portion of the via-hole 11 by etching the interlayer dielectric film 10 through a mask of the resist pattern 30p. COPYRIGHT: (C)2004,JPO