SEMICONDUCTOR DEVICE AND ITS FABRICATING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device comprising semiconductor elements or semiconductor element groups capable of high speed operation and having large current drive power in which variations are suppressed between the elements by forming a crystalline semiconductor film where a crystal grain field does not exist as much as possible at least in the channel forming region on an insulating surface. SOLUTION: An insulation film having an opening is formed on a substrate having an insulating surface, and a polycrystalline semiconductor film where an amorphous semiconductor film or a crystal grain boundary exists arbitrarily on the insulation film and over the opening is formed. Subsequently, molten semiconductor is poured into the opening of the insulation film which is thereby melted and crystallized or recrystallized thus forming a crystalline semiconductor film. The crystalline semiconductor film extending to a region other than the opening is then removed and the crystalline semiconductor film is left at the opening thus forming a gate insulation film and a gate electrode touching the upper surface part of the crystalline semiconductor film. COPYRIGHT: (C)2004,JPO