SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a high permittivity gate insulating film which can restrain shift and hysteresis of a flat band voltage, and to provide a manufacturing method of the device. SOLUTION: The semiconductor device is provided with a p-type silicon substrate 18; a gate insulation film 27 constituted of a multilayer film of a silicon nitriding oxide film 25 and an aluminum oxide film 26 containing nitrogen, both sequentially formed on the substrate 18; and a gate electrode 28 formed on the gate insulation film 27. COPYRIGHT: (C)2004,JPO