发明名称 ETCHING METHOD AND ETCHING LIQUID
摘要 PROBLEM TO BE SOLVED: To stably carry out a uniform a wet-etching for a silver or silver alloy thin film layer by suppressing the occurrence of etch residual dross in a silver or silver alloy and suppressing the occurrence of side etching caused by over etching. SOLUTION: In the etching method where a silver or silver alloy thin film present on the surface of a substrate is subjected to etching with an etching liquid, the etching liquid in which the concentration of silver ions is 0.005 to 1 wt.% is filled into an etching liquid feeding apparatus, and the etching liquid is brought into contact with the surface of the substrate having the silver or silver alloy thin film layer. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004002946(A) 申请公布日期 2004.01.08
申请号 JP20020210482 申请日期 2002.07.19
申请人 SONY CORP;ST LCD KK;MITSUBISHI CHEMICALS CORP 发明人 MUNAKATA MASAKI;KOMATSU HIROHITO;KUMON TETSUSHI;TERAMOTO KAZUMASA;AIDA NOBUHIRO;MOTOI MASAKAZU;SAITO NORIYUKI;SAKAKIBARA TOSHIAKI;ISHIKAWA MAKOTO
分类号 C23F1/30;H01L21/28;H01L21/308;H01L21/3205;H01L21/3213;H01L23/52;(IPC1-7):C23F1/30;H01L21/320;H01L21/321 主分类号 C23F1/30
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