发明名称 |
METHOD OF FORMING A SILICON NITRIDE DIELECTRIC LAYER |
摘要 |
Methods of forming thin nitride dielectric layers for semiconductor devices are provided. Additionally, methods of forming capacitor structures utilizing thin nitride dielectric layers are provided. The thin nitride layers are formed by nitridizing the surface of a doped or undoped semiconductor substrate using a remote plasma nitridization or a rapid thermal nitridization to form a first growth of silicon nitride. A self-limiting second growth of silicon nitride is formed using a remote plasma nitridization. The resulting silicon nitride layers exhibit improved dielectric and leakage characteristics.
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申请公布号 |
US2004005788(A1) |
申请公布日期 |
2004.01.08 |
申请号 |
US20020190261 |
申请日期 |
2002.07.03 |
申请人 |
GONZALEZ FERNANDO;ZHANG JOHN;PING ER-XUAN |
发明人 |
GONZALEZ FERNANDO;ZHANG JOHN;PING ER-XUAN |
分类号 |
H01L21/02;H01L21/321;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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地址 |
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