| 发明名称 |
UNSATURATED MONOMERS, POLYMERS, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PROCESS OF PATTERN FORMATION |
| 摘要 |
<p>A chemically amplified resist composition is provided, which exhibits high transparency to light rays of 220 nm or below and is excellent in etching resistance and adhesion to a substrate. The composition is prepared by using a polymer comprising at least one kind of repeating structural units having bridged alicyclic gamma-lactone structures as represented by the general formula (III), (IV), or (V)</p> |
| 申请公布号 |
WO2004003035(A1) |
申请公布日期 |
2004.01.08 |
| 申请号 |
WO2003JP08209 |
申请日期 |
2003.06.27 |
| 申请人 |
NEC CORPORATION;MAEDA, KATSUMI;NAKANO, KAICHIRO |
发明人 |
MAEDA, KATSUMI;NAKANO, KAICHIRO |
| 分类号 |
C07D307/92;C07D307/93;C07D493/22;C08F20/28;C08F32/08;C08G61/08;C08G61/12;G03F7/039;H01L21/027;(IPC1-7):C08F20/28 |
主分类号 |
C07D307/92 |
| 代理机构 |
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