SILICON SINGLE CRYSTAL MATERIAL AND ITS PRODUCTION METHOD

摘要

A method for producing a thick sheet or block of a silicon single crystal material having a desired thickness by the CZ method. The resistivity of the material is within ± 10% of the determined resistivity of a sample after the CZ growth and is above 10 ohm.cm. The thermal donors in the material are made to disappear and cracking does not occur. The method for producing a silicon single crystal having a resistivity of above 10 ohm.cm and containing oxygen at a concentration of above 1x10<17> atoms/cm<3> comprises a heat-treatment step of maintaining the material at a temperature from 550°C to 800°C for about 15 minutes, a rapid-cooling step of cooling the material at 2°C/sec during at least the period in which the temperature decreases from 550°C to 400°C within the cooling range from the heat-treatment end temperature to 350°C, and a cooling step of cooling the material from the rapid-cooling end temperature to the room temperature at below 1°C/section.