发明名称 INFRARED SENSOR
摘要 PROBLEM TO BE SOLVED: To provide an infrared sensor of high sensitivity. SOLUTION: A support body for supporting a sensor on a hollow structure is made very thin compared to a conventional structure such that a cross sectional area is greatly reduced, resulting great reduction of the thermal conductance. As a result, the infrared sensor of high sensitivity can be obtained. In the present invention, an insulating layer of the support body region is etched to allow embedding of a sacrificing silicon layer therein. An aspect ratio of the insulating layer RIE for forming a support leg is greatly reduced. This facilitates a process, and further reduces a cross sectional area of the support leg as a side effect, thereby the sensitivity can be made high. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004004095(A) 申请公布日期 2004.01.08
申请号 JP20030155408 申请日期 2003.05.30
申请人 TOSHIBA CORP 发明人 IIDA YOSHINORI;MASHIO NAOYA;SHIGENAKA KEITARO
分类号 G01J1/02;G01J5/48;H01L27/14;H01L27/146;(IPC1-7):G01J1/02 主分类号 G01J1/02
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